Rotable Parts Exchange serves as a comprehensive source for military products, aerospace equipment, and Microcircuit Memory items. You have expressed particular interest in part number G452137-23, a Raytheon Company component we offer that is presented with the NSN 5962-01-330-5540 for straightforward identification and procurement. By completing and submitting the Request for Quote form provided on this page, you can obtain pricing details on this NSN part for your comparisons. Once our staff members receive and review your submitted information, a dedicated account manager will directly contact you with a response within 15 minutes or less.
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We strive to streamline the purchasing process and simplify it as much as possible, which includes providing detailed listings for all components to help customers pinpoint their exact needs. For instance, part number G452137-23 is manufactured by Raytheon Company under the CAGE Code 3B150. Additionally, by using the initial digits of the NSN 5962-01-330-5540, you can discover that this component is associated with the FSC 5962 Microcircuits Electronic. If you have any specific questions about our database, you may always give us a call or email, as we would be delighted to assist you however we can. Otherwise, we encourage you to secure a quote for part number G452137-23 at your earliest convenience.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-330-5540 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013305540 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| ROM/PROM | 2 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BIPOLAR AND BURN IN AND MONOLITHIC AND PROGRAMMED AND SCHOTTKY AND 3-STATE OUTPUT |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEQ | TIME RATING PER CHACTERISTIC | 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | PROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
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