Rotable Parts Exchange serves as a comprehensive source for military products, aerospace equipment, and Semiconductor Devic items. You have expressed particular interest in part number 77A112799P1, a Lockheed Martin Corporation component we offer that is presented with the NSN 5961-01-372-8127 for straightforward identification and procurement. By completing and submitting the Request for Quote form provided on this page, you can obtain pricing details on this NSN part for your comparisons. Once our staff members receive and review your submitted information, a dedicated account manager will directly contact you with a response within 15 minutes or less.
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We strive to streamline the purchasing process and simplify it as much as possible, which includes providing detailed listings for all components to help customers pinpoint their exact needs. For instance, part number 77A112799P1 is manufactured by Lockheed Martin Corporation under the CAGE Code 03538. Additionally, by using the initial digits of the NSN 5961-01-372-8127, you can discover that this component is associated with the FSC 5961 Semiconductor Devices and Associated Hardware. If you have any specific questions about our database, you may always give us a call or email, as we would be delighted to assist you however we can. Otherwise, we encourage you to secure a quote for part number 77A112799P1 at your earliest convenience.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-372-8127 Item PartTypeName: SEMICONDUCTOR DEVICES,UNITIZED | 5961 | 013728127 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 77A112799P001 | 5 | 1 | C | A |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN 4TH TRANSISTOR AND 5.0 NOMINAL BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN 4TH TRANSISTOR AND 50.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN 4TH TRANSIS |
| CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS NOMINAL TOTAL POWER DISSIPATION 2ND TRANSISTOR |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS NOMINAL TOTAL POWER DISSIPATION 3RD TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 5.0 WATTS NOMINAL TOTAL POWER DISSIPATION 4TH TRANSISTOR |
| ABHP | OVERALL LENGTH | 0.375 INCHES NOMINAL |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| ABMK | OVERALL WIDTH | 0.340 INCHES NOMINAL |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN 2ND TRANSISTOR AND-4.0 NOMINAL BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN 2ND TRANSISTOR AND-60.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN 2ND TRAN |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN 3RD TRANSISTOR AND-4.0 NOMINAL BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN 3RD TRANSISTOR AND-60.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN 3RD TRAN |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN 1ST TRANSISTOR AND 5.0 NOMINAL BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN 1ST TRANSISTOR AND 50.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN 1ST TRANSIS |
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ASKA | COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES NOMINAL COLLECTOR CURRENT,DC ALL TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 5.0 WATTS NOMINAL TOTAL POWER DISSIPATION 1ST TRANSISTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 9 PIN |
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