| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-093-6160 (010936160) |
| NCB Code | USA (01) |
| Manufacturer | Hamilton Sundstrand Corporation, Boeing Company The, Intel Corporation, Advanced Micro Devices Inc, Dla Land And Maritime, Military Specifications, Lockheed Martin Corporation, Philips Semiconductors Ltd, Raytheon Company, Fairchild Semiconductor Corp, National Semiconductor Corporation, Thales Sa, International Electric Co |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 5E8971 344-0014 | hamilton sundstrand corporation | microcircuit memory | 73030 | RFQ |
| 000-8003-983 | boeing company the | microcircuit memory | 94756 | RFQ |
| 3636B-1 | intel corporation | microcircuit memory | 34649 | RFQ |
| AM27S191DCB | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| ROM PROM HEAD 029 | dla land and maritime | microcircuit memory | 16236 | RFQ |
| M3636B-1 | intel corporation | microcircuit memory | 34649 | RFQ |
| MIL-M-38510/210 | military specifications | microcircuit memory | 81349 | RFQ |
| 5962-3821002BJX | military specifications | microcircuit memory | 81349 | RFQ |
| 7908628-06 | lockheed martin corporation | microcircuit memory | 90536 | RFQ |
| 477-1690-001 | boeing company the | microcircuit memory | 94756 | RFQ |
| JM38510/21002BJX | military specifications | microcircuit memory | 81349 | RFQ |
| 7909151-06 | lockheed martin corporation | microcircuit memory | 90536 | RFQ |
| JAN-M38510/21002BJX | military specifications | microcircuit memory | 81349 | RFQ |
| 7907566-02 | lockheed martin corporation | microcircuit memory | 90536 | RFQ |
| 82S191 | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| AM27S291ADC | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| 5962-3821002BJB | military specifications | microcircuit memory | 81349 | RFQ |
| G134663-2 | raytheon company | microcircuit memory | 49956 | RFQ |
| N82S191N | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| R29681SMB | fairchild semiconductor corp | microcircuit memory | 07933 | RFQ |
| D3636B1 | intel corporation | microcircuit memory | 34649 | RFQ |
| HM1-76161-5 | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| DM77S191J 883B | national semiconductor corporation | microcircuit memory | 27014 | RFQ |
| 99116292 | thales sa | microcircuit memory | f6481 | RFQ |
| M38510/21002BJB | military specifications | microcircuit memory | 81349 | RFQ |
| M38510/21002BJX | military specifications | microcircuit memory | 81349 | RFQ |
| MD3636 | international electric co | microcircuit memory | 09653 | RFQ |
| 5962-3821002BJA | military specifications | microcircuit memory | 81349 | RFQ |
| M38510/21002BJA | military specifications | microcircuit memory | 81349 | RFQ |
| R29681ASMB | fairchild semiconductor corp | microcircuit memory | 07933 | RFQ |
| S82S191I 883B | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| R29683ASMB | fairchild semiconductor corp | microcircuit memory | 07933 | RFQ |
| AM27S191APC | advanced micro devices inc | microcircuit memory | 34335 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.02 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND SCHOTTKY AND W/BUFFERED OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/21 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-093-6160, 5962010936160 | ||||
| 5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
| 5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
| 5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
If You’re Ever Looking for NSN parts Or Have an Aircraft On Ground Situation, Don’t forget That We offer Competitive Pricing and Guaranteed On-Time Delivery.
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